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| x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.11 MAX x Ultra High-Speed Switching x SOP-8 Package x Two FET Devices built-in s General Description The XP134A11A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.065(Vgs=-10V) Rds(on)=0.11(Vgs=-4.5V) Ultra high-speed switching Operational Voltage: -4.5V High density mounting: SOP-8 u s Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 s Pin Assignment PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain SOP-8 (TOP VIEW) s Equivalent Circuit 1 2 3 4 P-Channel MOS FET (2 devices built-in) s Absolute Maximum Ratings PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 20 -4 -16 -4 2 150 -55~150 Ta=25: UNITS V V A A A W : : 8 7 6 5 Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-30V, Vgs=0V Vgs=20V, Vds=0V Id=-1mA, Vds=-10V Id=-2A, Vgs=-10V Id=-2A, Vgs=-4.5V Id=-2A, Vds=-10V If=-4A, Vgs=0V MIN TYP MAX -10 1 -1.0 0.055 0.09 5 -0.85 -1.1 -2.5 0.065 0.11 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 680 450 170 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-2A Vdd=-10V CONDITIONS MIN TYP 15 20 30 20 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS :/W Electrical Characteristics Drain Current Vs. Drain / Source Voltage Drain Current Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Drain Current u Drain / Source On-State Resistance Vs. Ambient Temp. Gate / Source Cut Off Voltage Variance Vs. Ambient Temp. Electrical Characteristics Drain / Source Voltage Vs. Capacitance Switching Time Vs. Drain Current Gate / Source Voltage Vs. Gate Charge Reverse Drain Current Vs. Source / Drain Voltage u Standardized Transition Thermal Resistance Vs. Pulse Width |
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